MMDJ3N03BJT Datasheet, PDF (3/4 Pages) Motorola, Inc – DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES

PACKAGE DIMENSIONS
MMDJ3N03BJT
–A–
J
8
5
–B–
1
4
M_
G
–T–
8X D
SEATING
PLANE
0.25 (0.010) M T B S A S
CASE 751–05
ISSUE P
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS
DIM MIN MAX
A 4.80 5.00
B 3.80 4.00
C 1.35 1.75
D 0.35 0.49
F 0.40 1.25
G
1.27 BSC
J 0.18 0.25
K 0.10 0.25
M 0_{_} 7_{_}
P 5.80 6.20
R 0.25 0.50
STYLE 16:
PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
5. COLLECTOR, DIE #2
6. COLLECTOR, DIE #2
7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
Motorola Bipolar Power Transistor Device Data
3