English
Language : 

MMDJ3N03BJT Datasheet, PDF (1/4 Pages) Motorola, Inc – DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDJ3N03BJT/D
Preliminary Data Sheet
Plastic Power Transistors
SO–8 for Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
• Collector –Emitter Sustaining Voltage — VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain — hFE
= 100 Vdc (Min) @ IC = 1.0 Adc
= 90 Vdc (Min) @ IC = 3.0 Adc
• Low Collector –Emitter Saturation Voltage — VCE(sat)
= 0.235 Vdc (Max) @ IC = 1.2 Adc
= 0.5 Vdc (Max) @ IC = 5.0 Adc
• Miniature SO–8 Surface Mount Package – Saves Board Space
MMDJ3N03BJT
Motorola Preferred Device
DUAL BIPOLAR
POWER TRANSISTOR
NPN SILICON
30 VOLTS
3 AMPERES
E
C
CASE 751–05, Style 16
(SO–8)
B
E
C
Emitter–1
18
Collector–1
Base–1
27
Collector–1
B
Emitter–2
36
Collector–2
MARKING: 3N3BJT
ENG
Schematic
Base–2 4 5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Top View
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Pinout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Peak
Symbol
VCB
VCEO
VEB
IC
Value
45
30
± 8.0
3.0
5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
IB
TJ, Tstg
1.0
– 55 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance – Junction to Ambient(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C(1)
Derate above 25_C
Symbol
Max
RθJA
62.5
PD
2.0
16
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Temperature for Soldering
TL
260
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Mounted on 2” sq. FR–4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 seconds max.
Collector–2
Unit
Vdc
Vdc
Vdc
Adc
Adc
_C
Unit
_C/W
Watts
mW/_C
_C
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la96r Power Transistor Device Data
1