MMDF4N01HD Datasheet, PDF (3/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS

8
4.5 V
3.1 V
6 ^{2.7 V}
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 8 V
2.3 V
2.5 V
TJ = 25°C
2.1 V
8
VDS ≥ 10 V
6
MMDF4N01HD
4
1.9 V
1.7 V
2
1.5 V
0
0 0.2 0.4 0.6 0.8 1
1.3 V
1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
0.07
TJ = 25°C
ID = 2 A
0.06
4
100°C
25°C
2
TJ = – 55°C
0
1
1.2
1.4
1.6
1.8
2
2.2
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.050
TJ = 25°C
0.045
VGS = 2.7 V
0.05
0.040
4.5 V
0.04
0.035
0.03
0
2
4
6
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
2
VGS = 4.5 V
ID = 4 A
1.5
0.030
0
2
4
6
8
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
100
VGS = 0 V
TJ = 125°C
1
10
100°C
0.5
0
– 50 – 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
0
2
4
6
8
10
12
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3