MMDF4N01HD Datasheet, PDF (2/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS

MMDF4N01HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Temperature Coefficient (Negative)
IDSS
—
—
IGSS
—
VGS(th)
0.6
—
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
RDS(on)
—
—
Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc)
gFS
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 2.7 Vdc,
RG = 2.3 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
RG = 2.3 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Gate Charge
(See Figure 8)
(VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)
QT
—
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
—
Reverse Recovery Time
trr
—
(IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
2.0
—
mV/°C
µAdc
—
1.0
—
10
—
100
nAdc
0.8
2.8
0.035
0.043
6.0
1.1
—
0.045
0.055
—
Vdc
mV/°C
Ohm
mhos
425
595
pF
270
378
115
230
13
26
ns
60
120
20
40
29
58
10
20
42
84
24
48
28
56
9.2
13
nC
1.3
—
3.5
—
3.0
—
Vdc
0.95
1.1
0.78
—
38
—
ns
17
—
22
—
0.028
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data