MMDF3NO2HD Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR

TYPICAL ELECTRICAL CHARACTERISTICS
MMDF3N02HD
6
VGS = 10 V
5 ^{4.5 V}
3.9 V
4
3.5 V
3.7 V
TJ = 25°C
3.3 V
3.1 V
3
2.9 V
2
2.7 V
1
2.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
6
VDS ≥ 10 V
4
TJ = 100°C
25°C
2
– 55°C
0
1
1.4
1.8
2.2
2.6
3
3.4
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
ID = 1.5 A
TJ = 25°C
0.4
0.08
TJ = 25°C
0.07
VGS = 4.5 V
0.2
0.06
10 V
0
0 1 2 3 4 5 6 7 8 9 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
1.6
VGS = 10 V
1.4
ID = 1.5 A
1.2
1
0.8
0.6
– 50 – 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
0.05
0
1
2
3
4
5
6
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1000
VGS = 0 V
100
10
TJ = 125°C
100°C
25°C
1
0
4
8
12
16
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3