MMDF3NO2HD Datasheet, PDF (2/10 Pages) Motorola, Inc – TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR

MMDF3N02HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
—
—
IGSS
—
VGS(th)
1.0
—
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
—
—
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
2.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Gate Charge
See Figure 8
(VDS = 16 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
QT
—
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 3.0 Adc, VGS = 0 Vdc)
VSD
—
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
—
Reverse Recovery Time
See Figure 15
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
—
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
29
—
mV/°C
µAdc
—
1.0
—
10
—
100
nAdc
1.5
4.0
0.058
0.074
3.88
2.0
—
0.090
0.100
—
Vdc
mV/°C
Ohms
Mhos
455
630
pF
184
250
45
90
11
22
ns
58
116
17
35
20
40
7.0
21
32
64
27
54
21
42
12.5
18
nC
1.3
—
2.8
—
2.4
—
0.79
1.3
Vdc
0.72
—
23
—
ns
18
—
5.0
—
0.025
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data