MMDF2P01HD Datasheet, PDF (3/10 Pages) Motorola, Inc – DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS

4
VGS = 8 V
4.5 V
3.1 V
3
2.7 V
2
TYPICAL ELECTRICAL CHARACTERISTICS
2.5 V
TJ = 25°C
2.3 V
4
VDS ≥ 10 V
3
2.1 V
2
MMDF2P01HD
1.9 V
1
1.7 V
1.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
100°C
25°C
1
TJ = – 55°C
0
1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.35
TJ = 25°C
ID = 1 A
0.30
0.25
0.20
0.15
0.1
0
2
4
6
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
0.30
TJ = 25°C
0.25
0.20
0.15
VGS = 2.7 V
4.5 V
0.10
0
0.8
1.6
2.4
3.2
4
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2
VGS = 4.5 V
ID = 2 A
1.5
1
1000
VGS = 0 V
100
TJ = 125°C
0.5
0
– 50 – 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10
0
4
8
12
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
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