MMDF2P01HD Datasheet, PDF (2/10 Pages) Motorola, Inc – DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS

MMDF2P01HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
12
—
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
—
—
IGSS
—
VGS(th)
0.7
—
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 2.0 Adc)
(VGS = 2.7 Vdc, ID = 1.0 Adc)
RDS(on)
—
—
Forward Transconductance (VDS = 2.5 Vdc, ID = 1.0 Adc)
gFS
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS(3)
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 6.0 Vdc, ID = 2.0 Adc,
VGS = 2.7 Vdc,
RG = 6.0 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDS = 6.0 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Gate Charge
QT
—
(VDS = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc)
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(2)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
—
Reverse Recovery Time
trr
—
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
17
—
mV/°C
µAdc
—
1.0
—
10
—
100
nAdc
Vdc
1.0
1.1
3.0
—
mV/°C
Ohm
0.16
0.180
0.2
0.220
4.75
—
mhos
530
740
pF
410
570
177
250
21
45
ns
156
315
38
75
68
135
16
35
44
90
68
135
54
110
9.3
13
nC
0.8
—
4.0
—
3.0
—
Vdc
1.69
2.0
1.2
—
48
—
ns
23
—
25
—
0.05
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data