MMDF2C01HD Datasheet, PDF (3/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS

ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol Polarity Min
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage(2)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc)
Reverse Recovery Time
VSD
trr
(N)
—
(P)
—
(N)
—
(P)
—
(IF = IS,
dIS/dt = 100 A/µs)
ta
(N)
—
(P)
—
tb
(N)
—
(P)
—
Reverse Recovery Stored Charge
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
QRR
(N)
—
(P)
—
MMDF2C01HD
Typ
Max
Unit
0.95
1.1
Vdc
1.69
2.0
38
—
ns
48
—
17
—
23
—
22
—
25
—
0.028
—
µC
0.05
—
TYPICAL ELECTRICAL CHARACTERISTICS
8
4.5 V
3.1 V
6 ^{2.7 V}
4
N–Channel
VGS = 8 V
2.3 V
2.5 V
TJ = 25°C
2.1 V
1.9 V
4
VGS = 8 V
4.5 V
3.1 V
3
2.7 V
2
P–Channel
2.5 V
TJ = 25°C
2.3 V
2.1 V
1.7 V
2
1.5 V
0
0 0.2 0.4 0.6 0.8 1
1.3 V
1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
1.9 V
1
1.7 V
1.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
8
VDS ≥ 10 V
6
4
100°C
25°C
2
TJ = – 55°C
0
1
1.2
1.4
1.6
1.8
2
2.2
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4
VDS ≥ 10 V
3
2
100°C
25°C
1
TJ = – 55°C
0
1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Motorola TMOS Power MOSFET Transistor Device Data
3