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MMDF2C01HD Datasheet, PDF (1/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF2C01HD/D
⢠Designer's Data Sheet
Medium Power Surface Mount Products
Complementary TMOS
Field Effect Transistors
MiniMOS⢠devices are an advanced series of power MOSFETs
which utilize Motorolaâs High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
â¢
drainâtoâsource diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dcâdc converters, and power management in
D
portable and battery powered products such as computers, NâChannel
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
G
⢠Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
⢠Logic Level Gate Drive â Can Be Driven by Logic ICs
S
⢠Miniature SOâ8 Surface Mount Package â Saves Board Space
D
⢠Diode Is Characterized for Use In Bridge Circuits
PâChannel
⢠Diode Exhibits High Speed, With Soft Recovery
⢠IDSS Specified at Elevated Temperature
⢠Mounting Information for SOâ8 Package Provided
G
MMDF2C01HD
Motorola Preferred Device
COMPLEMENTARY
DUAL TMOS POWER FET
2.0 AMPERES
12 VOLTS
RDS(on) = 0.045 OHM
(NâCHANNEL)
RDS(on) = 0.18 OHM
(PâCHANNEL)
CASE 751â05, Style 14
SOâ8
NâSource
NâGate
PâSource
PâGate
1 8 NâDrain
2 7 NâDrain
3 6 PâDrain
4 5 PâDrain
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
Rating
S
Symbol
DrainâtoâSource Voltage
NâChannel
PâChannel
VDSS
GateâtoâSource Voltage
Drain Current â Continuous
â Pulsed
NâChannel
PâChannel
NâChannel
PâChannel
VGS
ID
IDM
Operating and Storage Temperature Range
Total Power Dissipation @ TA= 25°C (2)
Thermal Resistance â Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds.
DEVICE MARKING
TJ and Tstg
PD
RθJA
TL
D2C01
(1) Negative signs for PâChannel device omitted for clarity.
(2) Mounted on 2â square FR4 board (1â sq. 2 oz. Cu 0.06â thick single sided) with one die operating, 10 sec. max.
Top View
Value
20
12
± 8.0
5.2
3.4
48
17
â 55 to 150
2.0
62.5
260
Unit
Vdc
Vdc
A
°C
Watts
°C/W
°C
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF2C01HDR2
13â³
12 mm embossed tape
2500 units
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
©MMoottoororolal,aInTc.M19O9S6 Power MOSFET Transistor Device Data
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