MMBF2201PT1 Datasheet, PDF (3/6 Pages) Motorola, Inc – LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS

6
5
4
VGS = 4.5 V
3
2
VGS = 10 V
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ID, DRAIN CURRENT (AMPS)
Figure 3. On Resistance versus Drain Current
MMBF2202PT1
1.0
0.9
0.8
0.7
0.6
– 55
0.5
150 ²⁵
0.4
0.3
0.2
0.1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
1
25°
0.1
150°
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
VSD, SOURCE–DRAIN FORWARD VOLTAGE (VOLTS)
Figure 5. Source–Drain Forward Voltage
0.8
VGS = 5 V
0.7
0.6
VGS = 4.5 V
0.5
0.4
VGS = 4 V
0.3
VGS = 3.5 V
0.2
0.1
VGS = 3 V
0
01
2 3 4 5 6 7 8 9 10
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 6. On Region Characteristics
50
45
VGS = 0 V
40
f = 1 MHz
35
30
25
20
Ciss
15
10
Coss
5
Crss
0
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3