MMBF2201PT1 Datasheet, PDF (2/6 Pages) Motorola, Inc – LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS

MMBF2202PT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
V(BR)DSS
20
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
—
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IGSS
—
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
(VGS = 4.5 Vdc, ID = 50 mAdc)
rDS(on)
—
—
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
gFS
—
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
Ciss
—
Coss
—
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDG = 5.0 V)
Crss
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = –15 Vdc,
RL = 75 Ω, ID = 200 mAdc,
VGEN = –10 V, RG = 6.0 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Gate Charge (See Figure 5)
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
QT
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
—
Pulsed Current
ISM
—
Forward Voltage(2)
VSD
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
Typ
Max
Unit
—
—
Vdc
µAdc
—
1.0
—
10
—
±100
nAdc
1.7
2.4
Vdc
Ohms
1.5
2.2
2.0
3.5
600
—
mMhos
50
—
pF
45
—
20
—
2.5
—
ns
1.0
—
16
—
8.0
—
2700
—
pC
—
0.3
A
—
0.75
1.5
—
V
10
4.0
8
ID = 200 mA
3.5
VGS = 4.5 V
3.0
ID = 50 mA
6
2.5
2.0
4
1.5
VGS = 10 V
ID = 200 mA
1.0
2
0.5
0
01
234 56 78
VGS, GATE–SOURCE VOLTAGE (VOLTS)
9 10
Figure 1. On Resistance versus Gate–Source Voltage
0
– 40 – 20 0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 2. On Resistance versus Temperature
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data