MJE15028 Datasheet, PDF (3/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,120-150V,50W)

20
16
10
100 µs
5 ms
dc
1.0
0.1
0.02
2.0
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25°C
MJE15028
MJE15029
MJE15030
MJE15031
5.0
10
20
50
120 150
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Bias Safe Operating Area
MJE15028 MJE15030 MJE15029 MJE15031
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
The data of Figures 3 and 4 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
8.0
5.0
IC/IB = 10
TC = 25°C
3.0
VBE(off) = 9 V
2.0
5V
3V
1.0
1.5 V
0
0V
0 100 110 120 130 140 150
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. Reverse–Bias Switching
Safe Operating Area
1000
500
200
100
50
30
20
10
1.5
Cib (NPN)
Cib (PNP)
Cob (PNP)
Cob (NPN)
3.0 5.0 7.0 10
30 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
100 150
100
50
30
VCE = 10 V
20
IC = 0.5 A
PNP
TC = 25°C
NPN
10
5.0
0.5 0.7 1.0
2.0 3.0
f, FREQUENCY (MHz)
5.0 7.0 10
Figure 6. Small–Signal Current Gain
100
90
(PNP)
(NPN)
60
50
20
10
0
0.1
0.2
0.5
1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 7. Current Gain–Bandwidth Product
Motorola Bipolar Power Transistor Device Data
3