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MJE15028 Datasheet, PDF (1/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,120-150V,50W) | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE15028/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use as highâfrequency drivers in audio amplifiers.
⢠DC Current Gain Specified to 4.0 Amperes
hFE = 40 (Min) @ IC = 3.0 Adc
hFE = 20 (Min) @ IC = 4.0 Adc
⢠CollectorâEmitter Sustaining Voltage â
VCEO(sus) = 120 Vdc (Min) â MJE15028, MJE15029
VCEO(sus) = 150 Vdc (Min) â MJE15030, MJE15031
⢠High Current Gain â Bandwidth Product
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ fT = 30 MHz (Min) @ IC = 500 mAdc
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà ⢠TOâ220AB Compact Package
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ â Peak
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TA = 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
Temperature Range
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
MJE15028 MJE15030
MJE15029 MJE15031
120
150
120
150
5.0
8.0
16
2.0
50
0.40
2.0
0.016
â 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
Watts
W/_C
_C
Symbol
Max
Unit
RθJC
2.5
_C/W
RθJA
62.5
_C/W
TA TC
MJEN1P5N028*
MJE15030*
MJEP1N5P029*
MJE15031*
*Motorola Preferred Device
8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
120 â 150 VOLTS
50 WATTS
CASE 221Aâ06
TOâ220AB
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
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