MGP20N60U Datasheet, PDF (3/6 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor

60
17.5 V
15 V
50
20 V
40
12.5 V
30
20
VGE = 10 V
10
TJ = 25°C
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
MGP20N60U
60
17.5 V
15 V
12.5 V
50
20 V
40
30
VGE = 10 V
20
10
TJ = 125°C
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
60
50
VCE = 100 V
5.0 mS PULSE WIDTH
40
TJ = 25°C
125°C
30
20
10
0
5 6 7 8 9 10 11 12 13 14 15
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
2400
1600
Coes
800
Cres
TJ = 25°C
VGE = 0 V
Cies
0
0
5
10
15
20
25
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
1.8
IC = 10 A
1.7
1.6
7.5 A
1.5
5.0 A
1.4
VGE = 15 V
80 mS PULSE WIDTH
1.3
–50 –25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
20
16
QT
12
Q1
Q2
8
4
TJ = 25°C
VCC = 300 V
IC = 10 A
0
0
20
40
60
80
QG, TOTAL GATE CHARGE (nC)
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
Motorola IGBT Device Data
3