MGP20N60U Datasheet, PDF (1/6 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. It also provides fast switching charac-
teristics and results in efficient operation at high frequencies.
• Industry Standard TO–220 Package
• High Speed Eoff: 67 mJ/A typical at 125°C
• Low On–Voltage – 1.7 V typical at 10 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes
C
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by MGP20N60U/D
MGP20N60U
IGBT IN TO–220
20 A @ 90°C
31 A @ 25°C
600 VOLTS
VERY LOW
ON–VOLTAGE
G
E
G
C
E
CASE 221A–09, Style 9
TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
600
VCGR
600
VGE
± 20
IC25
31
IC90
20
ICM
40
PD
142
0.89
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
R_θJC
1.12
R_θJA
65
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL
200
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
°C/W
°C
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