J112 Datasheet, PDF (3/4 Pages) Motorola, Inc – JFET Chopper Transistor (N-Channel- Depletion)

20
10
7.0
5.0
Tchannel = 25°C
VDS = 15 V
3.0
2.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
ID, DRAIN CURRENT (mA)
20 30 50
Figure 6. Typical Forward Transfer Admittance
J112
15
10
Cgs
7.0
5.0
Cgd
3.0
Tchannel = 25°C
2.0
(Cds IS NEGLIGIBLE)
1.5
1.0
0.03 0.05 0.1
0.3 0.5 1.0
3.0 5.0 10
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Capacitance
200
IDSS 25 50 mA 75 mA 100 mA
= 10 mA
160 ^mA
125 mA
120
80
40
Tchannel = 25°C
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 8. Effect of Gate–Source Voltage
On Drain–Source Resistance
2.0
1.8
ID = 1.0 mA
VGS = 0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
– 70 – 40 – 10 20 50 80 110 140 170
Tchannel, CHANNEL TEMPERATURE (°C)
Figure 9. Effect of Temperature On
Drain–Source On–State Resistance
100
Tchannel = 25°C
10
90
9.0
80
8.0
70
rDS(on) @ VGS = 0
60
50
7.0
6.0
VGS(off)
5.0
40
4.0
30
3.0
20
2.0
10
1.0
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
IDSS, ZERO–GATE–VOLTAGE DRAIN CURRENT (mA)
Figure 10. Effect of IDSS On Drain–Source
Resistance and Gate–Source Voltage
NOTE 2
The Zero–Gate–Voltage Drain Current (IDSS), is the principle
determinant of other J-FET characteristics. Figure 10 shows
the relationship of Gate–Source Off Voltage (VGS(off) and
Drain–Source On Resistance (rds(on)) to IDSS. Most of the
devices will be within ±10% of the values shown in Figure 10.
This data will be useful in predicting the characteristic
variations for a given part number.
For example:
Unknown
rds(on) and VGS range for an J112
The electrical characteristics table indicates that an J112
has an IDSS range of 25 to 75 mA. Figure 10, shows rds(on) =
52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA.
The corresponding VGS values are 2.2 volts and 4.8 volts.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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