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J112 Datasheet, PDF (1/4 Pages) Motorola, Inc – JFET Chopper Transistor (N-Channel- Depletion) | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET Chopper Transistor
NâChannel â Depletion
3
GATE
1 DRAIN
2 SOURCE
Order this document
by J112/D
J112
MAXIMUM RATINGS
Rating
Symbol
Value
Drain â Gate Voltage
VDG
â 35
Gate â Source Voltage
VGS
â 35
Gate Current
IG
50
Total Device Dissipation @ TA = 25°C
PD
350
Derate above 25°C
2.8
Lead Temperature
Operating and Storage Junction
Temperature Range
TL
TJ, Tstg
300
â 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate â Source Breakdown Voltage
(IG = â1.0 µAdc)
Gate Reverse Current
(VGS = â15 Vdc)
Gate Source Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0 µAdc)
DrainâCutoff Current
(VDS = 5.0 Vdc, VGS = â10 Vdc)
ON CHARACTERISTICS
ZeroâGateâVoltage Drain Current(1)
(VDS = 15 Vdc)
Static DrainâSource On Resistance
(VDS = 0.1 Vdc)
Drain Gate and Source Gate OnâCapacitance
(VDS = VGS = 0, f = 1.0 MHz)
Drain Gate OffâCapacitance
(VGS = â10 Vdc, f = 1.0 MHz)
Source Gate OffâCapacitance
(VGS = â10 Vdc, f = 1.0 MHz)
1. Pulse Width = 300 µs, Duty Cycle = 3.0%.
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
ID(off)
IDSS
rDS(on)
Cdg(on)
+
Csg(on)
Cdg(off)
Csg(off)
1
23
CASE 29â04, STYLE 5
TOâ92 (TOâ226AA)
Min
35
â
â 1.0
â
Max
â
â 1.0
â 5.0
1.0
Unit
Vdc
nAdc
Vdc
nAdc
5.0
â
mAdc
â
50
â¦
â
28
pF
â
5.0
pF
â
5.0
pF
(Replaces J111/D)
©MMotootorroollaa,
SmallâSignal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
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