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PZT751T1 Datasheet, PDF (2/6 Pages) Motorola, Inc – SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT | |||
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PZT751T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
CollectorâEmitter Breakdown Voltage
(IC = 100 µAdc, IE = 0)
EmitterâBase Breakdown Voltage
(IE = 10 µAdc, IC = 0)
BaseâEmitter Cutoff Current
(VEB = 4.0 Vdc)
CollectorâBase Cutoff Current
(VCB = 80 Vdc, IE = 0)
V(BR)CEO
60
V(BR)CBO
80
V(BR)EBO
5.0
IEBO
â
ICBO
â
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 50 mAdc, VCE = 2.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
CollectorâEmitter Saturation Voltages
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
BaseâEmitter Voltages
(IC = 1.0 Adc, VCE = 2.0 Vdc)
BaseâEmitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
CurrentâGainâBandwidth
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width ⤠300 µs, Duty Cycle = 2.0%.
hFE
75
75
75
40
VCE(sat)
â
â
VBE(on)
â
VBE(sat)
â
fT
75
Max
Unit
â
Vdc
â
Vdc
â
Vdc
0.1
µAdc
100
nAdc
â
â
â
â
â
Vdc
0.5
0.3
1.0
Vdc
1.2
Vdc
â
MHz
2
Motorola SmallâSignal Transistors, FETs and Diodes Device Data
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