PZT751T1 Datasheet, PDF (1/6 Pages) Motorola, Inc – SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZT751T1/D
PNP Silicon Planar
Epitaxial Transistor
PZT751T1
Motorola Preferred Device
This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer
applications. The device is housed in the SOT–223 package which is designed for
medium power surface mount applications.
• High Current: 2.0 Amp
• The SOT–223 Package can be soldered using wave or reflow.
• SOT–223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die
• Available in 12 mm Tape and Reel
Use PZT751T1 to order the 7 inch/1000 unit reel.
Use PZT751T3 to order the 13 inch/4000 unit reel.
• NPN Complement is PZT651T1
COLLECTOR 2, 4
BASE
1
EMITTER 3
SOT–223 PACKAGE
HIGH CURRENT
PNP SILICON
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VCEO
60
VCBO
80
VEBO
5.0
IC
2.0
PD
0.8
6.4
Storage Temperature Range
Junction Temperature
DEVICE MARKING
Tstg
– 65 to 150
TJ
150
ZT751
THERMAL CHARACTERISTICS
Thermal Resistance from Junction–to–Ambient in Free Air
Maximum Temperature for Soldering Purposes
Time in Solder Bath
R_θJA
156
TL
260
10
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
°C/W
°C
Sec
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996