MTD20N06HDL Datasheet, PDF (2/12 Pages) Motorola, Inc – TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

MTD20N06HDL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
—
—
IGSS
—
VGS(th)
1.0
—
Static Drain–Source On–Resistance
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc)
RDS(on)
—
—
Drain–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
—
—
Forward Transconductance (VDS = 4.0 Vdc, ID = 10 Adc)
gFS
6.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDS = 30 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc,
RG = 9.1 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Gate Charge
QT
—
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc)
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
—
Reverse Recovery Time
(IS = 20 Adc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
trr
—
ta
—
tb
—
QRR
—
LD
—
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
25
—
mV/°C
µAdc
—
10
—
100
—
100
nAdc
1.5
6.0
0.045
0.037
0.76
—
12
2.0
—
0.070
0.045
1.2
1.1
—
Vdc
mV/°C
Ohm
Vdc
mhos
863
1232
pF
216
300
53
73
11
15
ns
151
190
34
35
75
98
14.6
22
nC
3.25
—
7.75
—
7.0
—
Vdc
0.95
1.1
0.88
—
22
—
ns
12
—
34
—
0.049
—
µC
nH
4.5
—
nH
7.5
—
2
Motorola TMOS Power MOSFET Transistor Device Data