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MTD20N06HDL Datasheet, PDF (1/12 Pages) Motorola, Inc – TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
HDTMOS E-FETÄâ¢
High Density Power FET
DPAK for Surface Mount or
Insertion Mount
NâChannel EnhancementâMode Silicon Gate
This advanced highâcell density HDTMOS EâFET is designed to
withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drainâtoâsource
diode with a fast recovery time. Designed for lowâvoltage,
highâspeed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited
for bridge circuits, and inductive loads. The avalanche energy
capability is specified to eliminate the guesswork in designs where
inductive loads are switched, and to offer additional safety margin
against unexpected voltage transients.
⢠Avalanche Energy Specified
G
⢠SourceâtoâDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
⢠Surface Mount Package Available in 16 mm, 13âinch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
⢠Available in Insertion Mount, Add â1 or 1 to Part Number
â¢
D
S
MTD20N06HDL
Motorola Preferred Device
TMOS POWER FET
LOGIC LEVEL
20 AMPERES
60 VOLTS
RDS(on) = 0.045 OHM
CASE 369Aâ13, Style 2
DPAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
DrainâSource Voltage
VDSS
DrainâGate Voltage (RGS = 1.0 Mâ¦)
VDGR
GateâSource Voltage â Continuous
GateâSource Voltage â NonâRepetitive (tp ⤠10 ms)
VGS
VGSM
Drain Current â Continuous @ 25°C
ID
Drain Current â Continuous @ 100°C
ID
Drain Current â Single Pulse (tp ⤠10 µs)
IDM
Total Power Dissipation
PD
Derate above 25°C
Total Power Dissipation @ TC = 25°C (1)
Operating and Storage Temperature Range
TJ, Tstg
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 20 Apk, L = 1.0 mH, RG = 25 â¦)
EAS
Thermal Resistance â Junction to Case
Thermal Resistance â Junction to Ambient
Thermal Resistance â Junction to Ambient (1)
RθJC
RθJA
RθJA
Maximum Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
TL
(1) When surface mounted to an FRâ4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
EâFET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Value
60
60
± 15
± 20
20
12
60
40
0.32
1.75
â 55 to 150
200
3.13
100
71.4
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
REV 1
©MMoottoororolal,aInTc.M19O9S6 Power MOSFET Transistor Device Data
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