MTB50N06VL Datasheet, PDF (2/10 Pages) Motorola, Inc – TMOS POWER FET 42 AMPERES 60 VOLTS

MTB50N06VL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = .25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
—
Vdc
—
64
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
µAdc
—
—
10
—
—
100
—
—
100
nAdc
VGS(th)
1.0
1.4
2.0
Vdc
—
4.3
—
mV/°C
Static Drain–to–Source On–Resistance (VGS = 5 Vdc, ID = 21 Adc)
Drain–to–Source On–Voltage
(VGS = 5 Vdc, ID = 42 Adc)
(VGS = 5 Vdc, ID = 21 Adc, TJ = 150°C)
Forward Transconductance (VDS = 6 Vdc, ID = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 42 Adc,
VGS = 5 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 42 Adc,
VGS = 5 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 42 Adc, VGS = 0 Vdc)
(IS = 42 Adc, VGS = 0 Vdc, TJ = 150°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
—
0.025 0.032 Ohms
Vdc
—
—
1.6
—
—
1.5
17
28
—
Mhos
—
1570
2200
pF
—
508
710
—
135
270
—
16
30
ns
—
355
701
—
80
160
—
160
320
—
40
60
nC
—
11
—
—
20
—
—
16
—
Vdc
—
1.03
2.5
—
0.94
—
Reverse Recovery Time
(IS = 42 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
trr
ta
tb
QRR
LD
—
91.1
—
ns
—
63.8
—
—
27.3
—
—
0.299
—
µC
nH
—
3.5
—
—
4.5
—
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
nH
—
7.5
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data