MTB4N80E1 Datasheet, PDF (2/8 Pages) Motorola, Inc – TMOS POWER FET 4.0 AMPERES 800 VOLTS

MTB4N80E1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 800 Vdc, VGS = 0 Vdc)
(VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
V(BR)DSS
800
—
—
1.02
—
Vdc
—
mV/°C
IDSS
µAdc
—
—
10
—
—
100
IGSS
—
—
100
nAdc
VGS(th)
2.0
3.0
4.0
Vdc
—
7.0
—
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 2.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 4.0 Adc)
(ID = 2.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 400 Vdc, ID = 4.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
(VDS = 400 Vdc, ID = 4.0 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
—
1.95
3.0
Ohm
Vdc
—
8.24
12
—
—
10
2.0
4.3
—
mhos
—
1320
2030
pF
—
187
400
—
72
160
—
13
30
ns
—
36
90
—
40
80
—
30
75
—
36
80
nC
—
7.0
—
—
16.5
—
—
12
—
Vdc
—
0.812
1.5
—
0.7
—
Reverse Recovery Time
(See Figure 14)
(IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
trr
ta
tb
QRR
LD
—
557
—
ns
—
100
—
—
457
—
—
2.33
—
µC
—
4.5
—
nH
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
—
7.5
—
nH
2
Motorola TMOS Power MOSFET Transistor Device Data