MTB4N80E1 Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 4.0 AMPERES 800 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.™
High Energy Power FET
D2PAK-SL Straight Lead
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
G
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
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by MTB4N80E1/D
MTB4N80E1
Motorola Preferred Device
TMOS POWER FET
4.0 AMPERES
800 VOLTS
RDS(on) = 3.0 OHM
CASE 418C–01, Style 2
D2PAK–SL
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Drain–Source Voltage
VDSS
800
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
800
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
ID
4.0
ID
2.9
IDM
12
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size
PD
125
1.0
2.5
Operating and Storage Temperature Range
TJ, Tstg – 55 to 150
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 8.0 Apk, L = 10 mH, RG = 25 Ω)
EAS
320
Thermal Resistance — Junction to Case
R_θJC
1.0
Thermal Resistance — Junction to Ambient
R_θJA
62.5
Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size R_θJA
50
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
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