MTB3N60E Datasheet, PDF (2/4 Pages) Motorola, Inc – TMOS POWER FET 3.0 AMPERES 600 VOLTS

MTB3N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 250 µAdc)
V(BR)DSS
600
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 600 V, VGS = 0)
(VDS = 480 V, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current — Forward (VGSF = 20 Vdc, VDS = 0)
Gate–Body Leakage Current — Reverse (VGSR = 20 Vdc, VDS = 0)
IDSS
µAdc
—
—
10
—
—
100
IGSSF
—
—
100
nAdc
IGSSR
—
—
100
nAdc
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
(TJ = 125°C)
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 A)
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 3.0 A)
(ID = 1.5 A, TJ = 100°C)
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 A)
VGS(th)
Vdc
2.0
—
4.0
1.5
—
3.5
RDS(on)
—
2.1
2.2
Ohms
VDS(on)
Vdc
—
—
9.0
—
—
7.5
gFS
1.5
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Ciss
Coss
Crss
—
770
—
pF
—
105
—
—
19
—
SWITCHING CHARACTERISTICS*
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
(VDD = 300 V, ID ≈ 3.0 A,
RL = 100 Ω, RG = 12 Ω,
VGS(on) = 10 V)
(VDS = 420 V, ID = 3.0 A,
VGS = 10 V)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
23
—
ns
—
34
—
—
58
—
—
35
—
—
28
31
nC
—
5.0
—
—
17
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Forward Turn–On Time
(IS = 3.0 A, di/dt = 100 A/µs)
Reverse Recovery Time
VSD
ton
trr
—
—
1.4
Vdc
—
**
—
ns
—
400
—
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Ld
nH
—
3.5
—
—
4.5
—
Internal Source Inductance
Ls
(Measured from the source lead 0.25″ from package to source bond pad)
—
7.5
—
* Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
** Limited by circuit inductance.
2
Motorola TMOS Power MOSFET Transistor Device Data