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MTB3N60E Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS POWER FET 3.0 AMPERES 600 VOLTS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.â¢
High Energy Power FET
D2PAK for Surface Mount
NâChannel EnhancementâMode Silicon Gate
This advanced high voltage TMOS EâFET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drainâtoâsource diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
⢠Avalanche Energy Capability Specified at Elevated
Temperature
⢠Low Stored Gate Charge for Efficient Switching
⢠Internal SourceâtoâDrain Diode Designed to Replace External
Zener Transient Suppressor â Absorbs High Energy in the
G
Avalanche Mode
⢠SourceâtoâDrain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
®
D
S
MTB3N60E
Motorola Preferred Device
TMOS POWER FET
3.0 AMPERES
600 VOLTS
RDS(on) = 2.2 OHMS
CASE 418Bâ03, Style 2
D2PAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 Mâ¦)
GateâSource Voltage â Continuous
GateâSource Voltage â Nonârepetitive
VDSS
VDGR
VGS
VGSM
600
Vdc
600
Vdc
± 20
Vdc
± 40
Vpk
Drain Current â Continuous
Drain Current â Continuous @ 100°C
Drain Current â Pulsed
ID
3.0
Adc
ID
2.4
IDM
14
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C(1)
PD
75
Watts
0.6
W/°C
2.5
Watts
Operating and Storage Temperature Range
TJ, Tstg
â 55 to 150
°C
UNCLAMPED DRAINâTOâSOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse DrainâtoâSource Avalanche Energy â TJ = 25°C
Single Pulse DrainâtoâSource Avalanche Energy â TJ = 100°C
Repetitive Pulse DrainâtoâSource Avalanche Energy
WDSR(2)
290
mJ
46
WDSR(3)
7.5
THERMAL CHARACTERISTICS
Thermal Resistance â Junction to Case°
Thermal Resistance â Junction to Ambient°
Thermal Resistance â Junction to Ambient(1)
RθJC
RθJA
RθJA
1.67
°C/W
62.5
50
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
TL
260
°C
(1) When surface mounted to an FRâ4 board using the minimum recommended pad size
(2) VDD = 50 V, ID = 3.0 A
(3) Pulse Width and frequency is limited by TJ(max) and thermal response
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
EâFET and Designerâs are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O97S Power MOSFET Transistor Device Data
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