MRFG35003MT1 Datasheet, PDF (2/8 Pages) Motorola, Inc – The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR

Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Saturated Drain Current
(V_DS = 3.5 Vdc, V_GS = 0 Vdc)
I_DSS
—
Off State Leakage Current
(V_GS = –0.4 Vdc, V_DS = 0 Vdc)
Off State Drain Current
(V_DS = 12 Vdc, V_GS = –2.5 Vdc)
Off State Current
(V_DS = 28.5 Vdc, V_GS = –2.5 Vdc)
I_GSS
—
I_DSO
—
I_DSX
—
Gate–Source Cut–off Voltage
(V_DS = 3.5 Vdc, I_DS = 6.5 mA)
V_GS(th)
–1.2
Quiescent Gate Voltage
(V_DS = 12 Vdc, I_D = 80 mA)
Power Gain
(V_DD = 12 Vdc, I_DQ = 55 mA, f = 3.55 GHz)
Output Power, 1 dB Compression Point
(V_DD = 12 Vdc, I_DQ = 55 mA, f = 3.55 GHz)
Drain Efficiency
(V_DD = 12 Vdc, I_DQ = 55 mA, P_out = 0.30 W Avg.,
f = 3.55 GHz)
V_GS(Q)
G_ps
P_1dB
h_D
–1.2
10
—
23
Adjacent Channel Power Ratio
(V_DD = 12 Vdc, P_out = 0.30 W Avg., I_DQ = 55 mA,
f = 3.55 GHz, W–CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
ACPR
—
Typ
1.3
< 1.0
—
< 1.0
–0.9
–0.9
11.5
3
25
–42
Max
Unit
—
Adc
100
µAdc
450
µAdc
7
mAdc
–0.7
Vdc
–0.7
Vdc
—
dB
—
W
—
%
–40
dBc
MRFG35003MT1
2
MOTOROLA RF DEVICE DATA
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