MRFG35003MT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRFG35003MT1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
• Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 12 Volts,
I_DQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 300 mWatt
Power Gain — 11.5 dB
Efficiency — 25%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35003MT1
3.5 GHz, 3 W, 12 V
POWER FET
GaAs PHEMT
CASE 466–02, STYLE 1
PLD–1.5
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Gate–Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature⁽¹⁾
Operating Case Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22–A113
Class AB
Symbol
V_DSS
P_D
V_GS
P_in
T_stg
T_ch
T_C
Symbol
R_θJC
(1) For reliable operation, the operating channel temperature should not exceed 150°C.
(2) Simulated.
Value
15
8.1⁽²⁾
0.05⁽²⁾
–5
29
– 65 to +150
175
– 20 to +85
Max
18.5⁽²⁾
Rating
1
Unit
Vdc
Watts
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
REV 0
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MRFG35003MT1
1