MRF9180 Datasheet, PDF (2/12 Pages) Motorola, Inc – 880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS (1)
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate–Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 µAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 700 mAdc)
Drain–Source On–Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 6 Adc)
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Reverse Transfer Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
Two–Tone Common–Source Amplifier Power Gain
(V_DD = 26 Vdc, P_out = 170 W PEP, I_DQ = 2 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
I_DSS
—
I_DSS
—
I_GSS
—
V_GS(th)
2
V_GS(Q)
—
V_DS(on)
—
g_fs
—
C_oss
—
C_rss
—
G_ps
16
Two–Tone Drain Efficiency
(V_DD = 26 Vdc, P_out = 170 W PEP, I_DQ = 2
f1 = 880.0 MHz, f2 = 880.1 MHz)
700 mA,
η
35
3rd Order Intermodulation Distortion
(V_DD = 26 Vdc, P_out = 170 W PEP, I_DQ = 2
f1 = 880.0 MHz, f2 = 880.1 MHz)
700 mA,
IMD
—
Input Return Loss
(V_DD = 26 Vdc, P_out = 170 W PEP, I_DQ = 2
f1 = 880.0 MHz, f2 = 880.1 MHz)
700 mA,
IRL
—
Two–Tone Common–Source Amplifier Power Gain
(V_DD = 26 Vdc, P_out = 170 W PEP, I_DQ = 2 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
G_ps
—
Two–Tone Drain Efficiency
(V_DD = 26 Vdc, P_out = 170 W PEP, I_DQ = 2
f1 = 865.0 MHz, f2 = 865.1 MHz)
700 mA,
η
—
3rd Order Intermodulation Distortion
(V_DD = 26 Vdc, P_out = 170 W PEP, I_DQ = 2
f1 = 865.0 MHz, f2 = 865.1 MHz)
700 mA,
IMD
—
Input Return Loss
(V_DD = 26 Vdc, P_out = 170 W PEP, I_DQ = 2
f1 = 865.0 MHz, f2 = 865.1 MHz)
700 mA,
IRL
—
Power Output, 1 dB Compression Point
(V_DD = 26 Vdc, CW, I_DQ = 2 700 mA,
f1 = 880.0 MHz)
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
P_1dB
—
Typ
—
—
—
2.9
3.7
0.19
6
77
3.8
17.5
39
–31
–15
17.5
38.5
–31
–13
170
Max
Unit
10
µAdc
1
µAdc
1
µAdc
4
Vdc
—
Vdc
0.5
Vdc
—
S
—
pF
—
pF
—
dB
—
%
–28
dBc
–9
dB
—
dB
—
%
—
dBc
—
dB
—
W
MRF9180 MRF9180S
2
MOTOROLA RF DEVICE DATA