MRF9180 Datasheet, PDF (1/12 Pages) Motorola, Inc – 880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, I_DQ = 2 700 mA
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 17 dB
Efficiency — 26%
Adjacent Channel Power –
750 kHz: –45.0 dBc @ 30 kHz BW
1.98 MHz: –60.0 dBc @ 30 kHz BW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW)
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
Order this document
by MRF9180/D
MRF9180
MRF9180S
880 MHz, 170 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 375D–04, STYLE 1
NI–1230
MRF9180
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 375E–03, STYLE 1
NI–1230S
MRF9180S
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
65
–0.5, +15
388
2.22
–65 to +200
200
Class
1 (Minimum)
M1 (Minimum)
Max
0.45
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
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MRF9180 MRF9180S
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