MRF894 Datasheet, PDF (2/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
10
—
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
45
—
pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(Pout = 30 W, VCC = 24 Vdc, f = 900 MHz)
GPE
7.0
8.5
—
dB
Collector Efficiency
(Pout = 30 W, VCC = 24 Vdc, f = 900 MHz)
η
55
60
—
%
L1
C4
L4
C9
VRE
PORT
C1
+
C2
B
SOCKET
B
SOCKET
+ 24 Vdc
+
C12
C13
ÇÇÇÇÇÇÇÇ_TL1ÇÇÇÇ _C3ÇÇÇÇÇÇÇÇÇÇÇÇ_TL2 ÇÇÇÇ^LÇÇÇDz
C5
C7
DUT
ÇÇÇÇ^L3ÇÇÇÇÇÇÇÇ_TL3 ÇÇÇÇÇÇÇÇ_C1ÇÇÇÇ₁ ÇÇÇÇ_TL4ÇÇÇÇ
C6
C8
C10
B — Ferrite Bead, Ferroxcube 56–590–65–3B
C1, C13 — 5.0 µF, 50 Vdc
C2, C12 — 1000 pF Unelco
C3, C11 — 47 pF, 100 Mil Chip Capacitor
C4, C9 — 91 pF, Mini–Underwood
C5, C6 — 12 pF, Mini–Underwood
C7 — 18 pF, Mini–Underwood
C8 — 24 pF, Mini–Underwood
C10 — 0.8 – 8.0 pF Johanson Gigatrim
L1, L4 — 11 Turns #20 Enameled Over 10 Ω Carbon Resistor
L2, L3 — 4 Turns #20 Enameled, .15″ ID
TL1, TL4 — Micro Strip Line, 50 Ω
TL2 — Micro Strip, Zo = 30 Ω, λ/4 @ 875 MHz
TL3 — Micro Strip, Zo = 22 Ω, λ/4 @ 875 MHz
Board — 0.032″ Glass Teflon
Board — 2 oz. Cu CLAD, ε_r = 2.55
Figure 1. 850 – 900 MHz Broadband Circuit Schematic
MRF894
22
MOTOROLA RF DEVICE DATA