MRF894 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for 24 volt UHF large–signal, common–base amplifier applications
in industrial and commercial FM equipment operating in the range of
804 – 960 MHz.
• Specified 24 Volt, 900 MHz Characteristics
Output Power = 30 Watts
Power Gain = 7.0 dB Min
Efficiency = 55% Min
• Series Equivalent Large–Signal Characterization
• Capable of 30:1 VSWR Load Mismatch at Rated Output Power and Supply
Voltage
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Silicon Nitride Passivated
Order this document
by MRF894/D
MRF894
30 W, 900 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VCEO
30
Vdc
VCBO
50
Vdc
VEBO
4.0
Vdc
IC
7.0
Adc
PD
115
Watts
0.66
W/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
R_θJC
Min
1.5
Typ
Max
°C/W
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0)
V(BR)CEO
30
—
—
Vdc
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0)
V(BR)CES
50
—
—
Vdc
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current (VCB = 30 Vdc, IE = 0)
ICBO
—
—
10
mAdc
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF894
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