MRF891 Datasheet, PDF (2/4 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
6.5
8.0
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain (Broadband)
(VCC = 24 Vdc, Pout = 5.0 W, f = 900 MHz)
Gpe
9.0
10
—
dB
Collector Efficiency
(VCC = 24 Vdc, Pout = 5.0 W, f = 900 MHz)
η
50
57
—
%
Load Mismatch Stress
(VCC = 24 Vdc, Pin = 0.63 W, f = 900 MHz,
VSWR = 20:1, all phase angles)
ψ
No Degradation in Output Power
L1
C7
L2
SHORTED
PLUG
C6
C5
+
(FOR ∆ VRE
TEST)
ÇÇÇÇÇÇÇÇ_T1ÇÇÇÇ _C1ÇÇÇÇÇÇÇÇ_TÇÇÇÇ₂ ÇÇÇÇ^L3
SOCKETS
C3
DUT
C2
C4
L6
C11
C12
L5
+ VCC
+
C13
C14
GND
L4
ÇÇÇÇÇÇÇÇ_TÇÇÇÇ_3C9 ÇÇÇÇ_{0.685C″10} ÇÇÇÇÇÇÇÇ_T4 ÇÇÇÇ
C8
C15
C1 — 39 pF, 100 Mil Chip Capacitor
C2, C8, C15 — 0.8– 8.0 pF Johansen Gigatrim
C3, C4 — 12 pF, Mini–Unelco
C5, C13 — 1000 pF, 350 V Unelco
C6, C14 — 10 µF, 25 V Tantalum
C7, C11, C12 — 91 pF, Mini–Unelco
C9 — 5.0 pF, MIni–Unelco
C10 — 47 pF, 100 Mil Chip Capacitor
L1, L6 — 10 Turns #20 AWG Around 10 Ohm 1/2 Watt Resistor
L2, L5 — Ferrite Bead
L3 — 4 Turns #16 AWG Choke
L4 — 0.5″, #18 AWG Wire
T1, T4 — 50 Ohm Microstrip Line
T2 — W = 165 Mils, ȏ = 1946 Mils
T3 — W = 166 Mils, ȏ = 1563 Mils
PC Board — 0.031″ Glass Teflon (ε_r = 2.56)
Figure 1. Broadband Test Fixture
MRF891 MRF891S
2–12
MOTOROLA RF DEVICE DATA