MRF891 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF891/D
The RF Line
NPN Silicon
RF Power Transistors
. . . designed for 24 volt UHF large–signal, common–emitter amplifier applica-
tions in industrial and commercial FM equipment operating in the range of
800 – 960 MHz.
• Specified 24 Volt, 900 MHz Characteristics
Output Power = 5.0 Watts
Power Gain = 9.0 dB Min
Efficiency = 50% Min
• Series Equivalent Large–Signal Characterization
• Capable of Withstanding 20:1 VSWR Load Mismatch at Rated Output
Power and Supply Voltage
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Silicon Nitride Passivated
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF891
MRF891S
5.0 W, 900 MHz
RF POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 50°C (1)
Derate above 50°C
Storage Temperature Range
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Value
30
55
4.0
0.6
18
0.143
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
CASE 319–07, STYLE 2
MRF891
CASE 319A–02, STYLE 2
MRF891S
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
Max
R_θJC
7.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
30
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CES
55
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.5 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0, TC = 25°C)
ICES
—
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
hFE
30
—
150
—
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF891 MRF891S
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