MRF847 Datasheet, PDF (2/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
40
65
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
75
90
pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 45 W, f = 870 MHz)
GPB
4.5
5.5
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 45 W, f = 870 MHz)
η_c
60
68
—
%
Load Mismatch
(VCC = 15.5 Vdc, Pin = 16 W, f = 870 MHz,
VSWR = 10:1, All Phase Angles)
ψ
No Degradation in Output Power
L3
B
Vre PORT
C8
C9
+
C10
50 Ω
ÇÇÇÇ_TÇÇÇÇ_{L1 C1} ÇÇÇÇÇÇÇÇ_TLÇÇÇÇ₂ ÇÇÇÇ_L1
SOCKET ASSY.
C3
C4
D.U.T.
C2
C5
L4
B
+12.5 V
+
C12
C13
C11
ÇÇÇÇ_L2 ÇÇÇÇ_TLÇÇÇÇ₃ ÇÇÇÇ_C7 ÇÇÇÇ_TÇÇÇÇ_L4
50 Ω
C6
C1 — 51 pF, 100 mil Chip Capacitor
C2 — 12 pF, Mini–Underwood
C3 — 11 pF, Mini–Underwood
C4, C5 — 21 pF, Mini–Underwood
C6 — 0.08 – 8.0 pF Johansen Gigatrim
C7 — 47 pF, 100 mil Chip Capacitor
C8, C13 — 10 µF, 25 WV Electrolytic Capacitor
C9, C12 — 1000 pF Unelco J101
C10, C11 — 91 pF Mini–Underwood
L1, L2 — 4 Turns #18 Enameled, 200 mil ID
L3, L4 — 12 Turns #22 Enameled, Wound Over 10 Ω Resistor
TL1, TL4 — 50 Ω Microstrip Line
TL2 — Microstrip (Zo = 38 ohms, λ/4 @ 838 MHz)
TL3 — Microstrip (Zo = 28 ohms, λ/4 @ 838 MHz)
Board Material — 0.032″ Glass–Teflon, 2 oz. cu. clad, ε_r = 2.56
B — Ferrite Bead, Ferroxcube 56–590–65–3B
Figure 1. 806 – 870 MHz Broadband Test Circuit
MRF847
2
MOTOROLA RF DEVICE DATA