MRF847 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for 12.5 volt UHF large–signal, common–base amplifier applica-
tions in industrial and commercial FM equipment operating in the range of
806 – 960 MHz.
• Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 45 Watts
Power Gain = 4.5 dB Min
Efficiency = 60% Min
• Series Equivalent Large–Signal Characterization
• Internally Matched Input for Broadband Operation
• Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @
High Line and Rated Drive
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Silicon Nitride Passivated
Order this document
by MRF847/D
MRF847
45 W, 870 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
V(BR)EBO
V(BR)CEO
V(BR)CES
ICES
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Symbol
R_θJC
Min
4.0
16.5
38
—
CASE 319–07, STYLE 1
Value
16.5
38
4.0
12
150
0.85
– 65 to +150
200
Max
1.17
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
10
mAdc
(continued)
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF847
1