MRF641 Datasheet, PDF (2/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
30
70
150
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
40
60
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 15 W, f = 470 MHz)
Gpe
7.8
8.5
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 15 W, f = 470 MHz)
η
55
60
—
%
Output Mismatch Stress
(VCC = 16 Vdc, Pin = 3.0 W, f = 470 MHz,
VSWR = 20:1, All Phase Angles)
ψ
No Degradation in Output Power
RFC1
C9
C10
BEAD C13
L1
L2
+
C7
C8
–
+
C11
–
VCC 12.5 V
RF INPUT
Z1
Z2
C1
Z4
Z3
}
}
C3
C4
C12
RF OUTPUT
Z5
Z6
Z7
*
*
C5 C6
C2
PARTS
NOTES
Z1 — 1.225″ x 0.187″ Microstrip
Z2 — 0.884″ x 0.187″ Microstrip
Z3 — Capacitor Block (Base)
Z4 — Collector Block
Z5 — 1.1″ x 0.187″ Microstrip
Z6 — 0.433″ x 0.187″ Microstrip
Z7 — 0.4″ x 0.187″ Microstrip
Dotted Area — Capacitor Assembly
C1, C2 — 0.8 – 10 pF Johanson
*C5, C6, are mounted as close to the capacitor
C3, C4 — 24 pF Chip Caps 100 mils ATC
*assembly as possible.
C5, C6 — 22 pF Chip Caps 100 mils ATC
‡‡ C3, C4 are mounted in the capacitor assembly.
C12 — 220 pF Chip Cap 100 mils ATC
C7, C11 — 1.0 µF Tantalum 35 Vdc
Board — 62.5 mil Glass Teflon, ε_r = 2.55.
C9, C10 — 680 pF Feedthrough Allen–Bradley
C13 — 200 pF UNELCO
C8 — 0.1 µF, 50 V Erie Red Cap
RFC1 — VK 200 — 104B Ferrite Choke
L1 — 4 Turns 0.2″ Dia. #16 AWG
L2 — 9 Turns 0.15″ Dia. #16 AWG
Bead — Ferroxcube 56–590–65–35EB
Figure 1. Test Circuit Schematic
MRF641
2
MOTOROLA RF DEVICE DATA