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MRF641 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for 12.5 Volt UHF largeâsignal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
⢠Specified 12.5 Volt, 470 MHz Characteristics â
Output Power = 15 Watts
Minimum Gain = 7.8 dB
Efficiency = 55%
⢠Characterized with Series Equivalent LargeâSignal Impedance Parameters
⢠BuiltâIn Matching Network for Broadband Operation
⢠Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @
16âVolt High Line and Overdrive
⢠Circuit board photomaster available upon request by contacting RF Tactical
Marketing in Phoenix, AZ.
Order this document
by MRF641/D
MRF641
15 W, 470 MHz
CONTROLLED Q
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
CollectorâEmitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
EmitterâBase Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Symbol
RθJC
Min
16
36
4.0
â
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 316â01, STYLE 1
Value
16
36
4.0
3.0
43.7
0.25
â 65 to +150
Max
4.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ
Max
Unit
â
â
Vdc
â
â
Vdc
â
â
Vdc
â
5.0
mAdc
(continued)
MRF641
1
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