MRF6409 Datasheet, PDF (2/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(ICE = 1.0 Adc, VCE = 5.0 Vdc)
hFE
20
35
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
18
—
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
Gpe
10
11
—
dB
(VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz)
Collector Efficiency
η
(VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz)
50
60
—
%
Load Mismatch
Ψ
(VCC = 26 Vdc, Pout = 15 W (CW), ICQ = 50 mA, f = 960 MHz,
Load VSWR = 3:1, All Phase Angles at Frequency of Test)
No Degradation in Output Power
C8
C7
C6
RF INPUT
R2
R1
B1
C1
T1
D2
R3
P1
D1
D.U.T.
+
5.0 V
–
B2
C9
+
C10
C11
26 V
–
C3
C5
C2
C4
RF OUTPUT
B1, B2
C1
C2, C3
C4
C5
C6, C9
C7, C10
C8
Ferrite Bead
3.3 pF, Chip Capacitor, High Q
4.7 pF, Chip Capacitor, High Q
2.2 pF, Chip Capacitor, High Q
82 pF, Chip Capacitor, High Q
330 pF, Chip Capacitor, High Q
0.1 µF, Chip Capacitor
22 µF, 16 V, Tantalum Capacitor
C11
D1, D2
P1
R1
R2
R3
T1
Board
4.7 µF, 50 V, Tantalum Capacitor
Diode BAS16 Type or Equivalent
1.0 kΩ, Trimmer
3.3 Ω, Chip Resistor
68 Ω, Chip Resistor
2.2 kΩ, Resistor
NPN Transistor
Glass Teflon^®, ε_r = 2.55, H = 1/50 inch
Figure 1. Test Circuit Electrical Schematic
MRF6409
2
MOTOROLA RF DEVICE DATA