MRF6409 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The MRF6409 is designed for GSM base stations applications. It incorpo-
rates high value emitter ballast resistors, gold metallizations and offers a high
degree of reliability and ruggedness.
• To be used in Class AB
• Specified 26 Volts, 960 MHz Characteristics
Output Power — 20 Watts CW
Gain — 11 dB Typ
Efficiency — 60% Typ
Order this document
by MRF6409/D
MRF6409
20 W, 960 MHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
Emitter–Base Breakdown Voltage
(IB = 5.0 mAdc, IC =0)
V(BR)EBO
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CES
Collector–Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ICES
(1) Thermal resistance is determined under specified RF operating condition.
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
TJ
Symbol
R_θJC
Min
24
4.0
55
—
CASE 319–07, STYLE 2
Value
24
55
4.0
5.0
45
0.26
– 65 to +150
200
Max
3.8
Typ
Max
30
—
5.0
—
60
—
—
6.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mA
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF6409
1