MRF6404 Datasheet, PDF (2/10 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 V, IE = 0, f = 1 MHz)
For information only. This part is collector matched.
Cob
30
38
—
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 26 V, Pout = 30 W, ICQ = 150 mA, f = 1.88 GHz)
Common–Emitter Amplifier Power Gain
(VCC = 26 V, Pout = 28 W, ICQ = 150 mA)
(f = 1.99 GHz)
Gpe
7.5
8.5
—
dB
Gpe
7
8
—
dB
Collector Efficiency
(VCC = 26 V, Pout = 30 W, f = 1.88 GHz)
(VCC = 26 V, Pout = 28 W, f = 1.99 GHz)
Output Power at 1 dBc
(VCC = 26 V, f = 1.88 GHz)
(VCC = 26 V, f = 1.99 GHz)
Output Mismatch Stress: VSWR = 3:1 (all phase angles)
(VCC = 26 Vdc, Pout = 25 W, ICQ = 150 mA, f = 1.88 GHz)
η
P1dBc
Ψ
%
38
43
—
35
40
—
Watts
30
35
—
28
33
—
No Degradation in Output Power
f = 1.8 GHz
Zin
1.9 GHz
1.9 GHz
ZOL*
Zo = 20 Ω
f = 1.8 GHz
DCS EVALUATION
f
Zin
(GHz)
(Ω)
ZOL*
(Ω)
1.8
4.3 + j6.1
2.7 – j1.0
1.85
4.6 + j5.3
2.9 + j0.3
1.9
4.8 + j5.0
3.0 + j1.2
ZOL*: Conjugate of optimum load impedance into
which the device operates at a given output
power, voltage, current and frequency.
Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain
@ VCC = 26 V, ICQ = 150 mA, Pout = 30 W
MRF6404 MRF6404K
2
MOTOROLA RF DEVICE DATA