MRF6404 Datasheet, PDF (1/10 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The MRF6404 is designed for 26 volts microwave large signal, common
emitter, class AB linear amplifier applications operating in the range 1.8 to
2.0 GHz.
• Specified 26 Volts, 1.88 GHz Characteristics
Output Power — 30 Watts
Gain — 7.5 dB Min @ 30 Watts
Efficiency — 38% Min @ 30 Watts
• Characterized with Series Equivalent Large–Signal Parameters from
1.8 to 2.0 GHz
• To be used in Class AB for DCS1800 and PCS1900/Cellular Radio
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Order this document
by MRF6404/D
MRF6404
MRF6404K
30 W, 1.88 GHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mA, IB = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc)
Collector–Base Breakdown Voltage (IC = 50 mAdc)
Collector–Base Breakdown Voltage (IC = 50 mAdc, RBE = 75 Ω)
Collector Cutoff Current (VCE = 30 V, VBE = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)EBO
V(BR)CES
V(BR)CER
ICES
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)
hFE
(1) Thermal resistance is determined under specified RF operating condition.
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
TJ
Symbol
R_θJC
Min
24
4
60
40
—
20
CASE 395C–01, STYLE 1
Value
24
60
4
10
125
0.71
– 65 to +150
200
Max
1.4
Typ
Max
29
—
5
—
68
—
56
—
—
10
50
120
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Vdc
Vdc
Vdc
Vdc
mA
—
REV 2
©MMOotoTrOolaR, OIncL.A19R96F DEVICE DATA
MRF6404 MRF6404K
1