MRF6402 Datasheet, PDF (2/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 Adc, VCE = 20 Vdc)
hFE
50
—
200
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 V, IE = 0, f = 1 MHz)
Cob
—
6
—
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 26 V, Pout = 4 W, ICQ = 40 mA, f = 1.88 GHz)
Gp
9
10
—
dB
Collector Efficiency
(VCC = 26 V, Pout = 4 W, f = 1.88 GHz)
η
40
43
—
%
Load Mismatch
Ψ
(VCC = 26 V, Pout = 4.5 W, ICQ = 40 mA, f = 1.88 GHz,
Load VSWR = 3:1, All Phase Angles at Frequency of Test)
No Degradation in Output Power
1.84
1.75
Zin
1.75
f = 1.95 GHz
ZOL*
f = 1.95 GHz
Zo = 50 Ω
f
(GHz)
1.75
1.84
1.95
Zin
(Ω)
0.12 + j0.18
0.13 + j0.2
0.15 + j0.16
ZOL*
(Ω)
0.06 + j0.05
0.06 + j0.04
0.06 + j0.02
ZOL*: Conjugate of optimum load impedance
into which the device operates at a
given output power, voltage, current
and frequency.
Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain
@ VCE = 26 V, ICQ = 40 mA, Pout = 4.5 W
MRF6402
2
MOTOROLA RF DEVICE DATA