MRF6402 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The MRF6402 is designed for 1.8 GHz Personal Communications Network
(PCN) base stations applications. It incorporates high value emitter ballast
resistors, gold metallizations and offers a high degree of reliability and
ruggedness. For ease of design, this transistor has an internally matched input.
• To be used in Class AB for PCN and Cellular Radio Applications
• Specified 26 V, 1.88 GHz Characteristics
Output Power — 4.5 Watts
Gain — 10 dB Typ
Efficiency — 45% Typ
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF6402/D
MRF6402
4.5 W, 1.88 GHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, RBE = 75 Ω)
V(BR)CER
Emitter–Base Breakdown Voltage
(IE = 5 mAdc)
V(BR)EBO
Collector–Base Breakdown Voltage (IC = 10 mAdc)
V(BR)CBO
Collector–Emitter Leakage (VCE = 26 V, RBE = 75 Ω)
ICER
(1) Thermal resistance is determined under specified RF operating condition.
Symbol
VCER
VCBO
VEBO
IC
PD
Tstg
TJ
Symbol
R_θJC
Min
40
3.5
40
—
CASE 319–07, STYLE 2
Value
40
45
3.5
0.7
15
0.2
– 65 to +150
200
Max
5
Typ
Max
—
—
—
—
—
—
—
5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mA
(continued)
REV 7
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF6402
1