MRF6401 Datasheet, PDF (2/6 Pages) Motorola, Inc – RF LINEAR POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 Adc, VCE = 5 Vdc)
hFE
20
—
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 V, IE = 0, f = 1 MHz)
Cob
—
1.4
—
pF
FUNCTIONAL TESTS (VCC = 20 V, ICQ = 80 mA)
Common–Emitter Amplifier Power Gain
(f = 1660 MHz, Pout = 0.5 W)
(f = 1880 MHz, Pout = 0.5 W)
Load Mismatch
(f = 1660 MHz, f = 1880 MHz, Pout = 0.5 W,
Load VSWR = 20:1, all phase angles at frequency of test)
Gp
dB
10
11
—
9
10
—
ψ
No Degradation in Output Power
Intermodulation Distortion
(Pout = 0.5 W PEP, f1 = 1659.2 MHz, f2 = 1660 MHz)
(Pout = 0.5 W PEP, f1 = 1879.2 MHz, f2 = 1880 MHz)
IMD
dBc
– 30
– 35
—
– 30
– 35
—
RF
INPUT
R4
R5
R2
R3
R6
R7
Q1
R8
+
VCC
–
TL1
TL3
C4
C3
TL10
TL4
TL2
TP1
C1
TL4
C9
C10
C5
TL6
TL5
TL11
C6
C7
TL7 C2
TL9
C8
RF
OUTPUT
DUT
TL8
C1
C2
C3
C4, C6, C7, C9
C5
C8
C10
C11
Q1
1.5 pF, ATC Chip Capacitor 100A
3.9 pF, ATC Chip Capacitor 100A
56 pF, ATC Chip Capacitor 100A
15 nF, Chip Capacitor 0805
47 pF, ATC Chip Capacitor 100A
4.7 µF, 35 V, Capacitor
10 µF, 16 V, Capacitor
100 pF, ATC Chip Capacitor 100A
Transistor, BCV62
R2
R3
R4
R5
R6
R7, R8
TL1 to TL11
TP1
470 Ω, Chip Resistor 0805
4.7 kΩ, Chip Resistor 0805
8.2 kΩ, Chip Resistor 0805
5 kΩ, SMD Potentiometer
680 Ω, Chip Resistor 0805
7.5 Ω, Chip Resistor 0805
µStrip Lines; See Photomaster
Document, MRF6401PHT/D
µStrip Taper; See Photomaster
Document, MRF6401PHT/D
Figure 1. 1600 – 2000 MHz Broadband Application Amplifier Schematic
MRF6401
2
MOTOROLA RF DEVICE DATA