MRF6401 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF LINEAR POWER TRANSISTOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The MRF6401 is designed for Class A common emitter, linear power
amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically
designed for use in Personal Communications Network (PCN) base station and
INMARSAT Standard M applications.
• Specified 20 Volts, 1.66 GHz Characteristics:
Output Power — 0.5 Watts
Gain — 10 dB Min
Class A Operation
• Specified 20 Volts, 1.88 GHz Characteristics:
Output Power — 0.5 Watts
Gain — 9.0 dB Min
Class A Operation
• Circuit Board Photomaster Available by Ordering Document
MRF6401PHT/D from Motorola Literature Distribution.
Order this document
by MRF6401/D
MRF6401
0.5 W, 1.0 to 2.0 GHz
RF LINEAR
POWER TRANSISTOR
CASE 305C–02, STYLE 1
SOE200–PILL
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Operating Junction Temperature
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, RB = 75 Ω)
V(BR)CER
Emitter–Base Breakdown Voltage
(IE = 0.25 mAdc)
V(BR)EBO
Collector–Base Breakdown Voltage
(IC = 1 mAdc)
V(BR)CBO
(1) Thermal resistance is determined under specified RF operating condition.
Symbol
VCEO
VCBO
VEBO
TJ
PD
Tstg
Symbol
R_θJC
Min
28
3.5
45
Value
22
45
3.5
200
5.8
0.033
– 65 to +150
Max
30
Typ
Max
—
—
—
—
—
—
Unit
Vdc
Vdc
Vdc
°C
Watts
W/°C
°C
Unit
°C/W
Unit
Vdc
Vdc
Vdc
REV 1
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF6401
1