MRF553 Datasheet, PDF (2/6 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
12
20
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
Figures 1, 2
Gpe
11.5
13
—
dB
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz)
Collector Efficiency
Figures 1, 2
η
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz)
50
60
—
%
Load Mismatch Stress
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz,
VSWR ≥ 10:1 All Phase Angles)
ψ
—
No Degradation in Output Power
VBB =
R1
12.5 V
+
B
C5 C6
R2 D1
L5
RF
INPUT
C4
L4
L1 C2
L3
L2
C1
C3
D.U.T.
5xB
L9
C9
C8
B
L8
L6
L7
+
C10
C7
VCC =
12.5 V
RF
OUTPUT
C1 — 36 pF Mini Underwood
C2 — 47 pF Mini Underwood
C3 — 91 pF Mini Underwood
C4 — 68 pF Mini Underwood
C5, C9 — 1.0 µF Erie Red Cap Capacitor
C6, C10 — 0.1 µF, 35 V Tantulum
C7 — 470 pF Chip Capacitor
C8 — 2200 pF Chip Capacitor
R1 — 4.7 kΩ, 1/4 W
R2 — 100 Ω, 1/4 W
D1 — 1N4148 Diode
L1 — 3 Turns, #18 AWG, 0.210″ ID, 3/16″ Length
L2, L4, L7 — 0.62″, #18 AWG Wire Bent into “V”
L3, L6 — 60 x 125 x 250 Mils Copper Pad on 27 Mils Thick Alumina Substrate
L5 — 12 µH Molded Choke
L8 — 7 Turns, #18 AWG, 0.170″ ID, 7/16″ Length
L9 — 1.0″, #18 AWG Wire with 5 Ferrite Beads
B — Ferrite Bead
Board Material — Glass Teflon, ε_r = 2.56, t = 0.0625″
Figure 1. 140 – 175 MHz Broadband Circuit Schematic
MRF553
2
MOTOROLA RF DEVICE DATA