MRF553 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF553/D
The RF Line
NPN Silicon
RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the VHF
frequency range.
• Specified @ 12.5 V, 175 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 11.5 dB
Efficiency 60% (Typ)
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MRF553
1.5 W, 175 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 75°C (1, 2)
Derate above 75°C
VCEO
VCBO
VEBO
IC
PD
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Value
16
36
4.0
500
3.0
40
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
Symbol
R_θJC
CASE 317D–02, STYLE 2
Max
Unit
25
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
16
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
36
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0)
V(BR)CBO
36
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
ICES
—
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
hFE
30
—
200
—
NOTES:
(continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF553 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF553
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