MRF448 Datasheet, PDF (2/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
hFE
10
30
—
—
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Cob
—
350
450
pF
Common–Emitter Amplifier Power Gain
(VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, ICQ = 250 mA)
Collector Efficiency
(VCC = 50 Vdc, Pout = 250 W, f = 30 MHz, ICQ = 250 mA)
Intermodulation Distortion (2)
(VCE = 50 Vdc, Pout = 250 W (PEP), ICQ = 250 mA, f = 30 MHz)
Electrical Ruggedness
(VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz,
VSWR 3:1 at all Phase Angles)
GPE
η
IMD
ψ
12
14
—
dB
—
45
—
% (PEP)
—
65
—
% (CW)
—
– 33
– 30
dB
No Degradation in Output Power
NOTE:
2. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
R1
+
L5
L6
+
BIAS
RF
INPUT
+
C3
C4
CR1
–
L2
L1
C2
D.U.T.
C8
L3
L4
+
C9
C10
–
50 Vdc
–
RF
OUTPUT
C1
R2
C5
C7
C6
C1, C2, C5, C7 — 170– 780 pF, Arco 469
C3, C8, C9 — 0.1 µF, 100 V Erie
C4 — 500 µF @ 6.0 V
C6 — 360 pF, 3 x 120 pF 3.0 kV in parallel
C10 — 10 µF, 100 V
R1 — 10 Ω, 10 Watt
R2 — 10 Ω, 1.0 Watt
CR1 — 1N4997 or equivalent
L1 — 3 Turns, #16 Wire, 0.4″ I.D., 0.3″ Long
L2 — 0.8 µH, Ohmite Z–235 or equivalent
L3 — 12 Turns, #16 Enameled Wire Closewound 0.25″ I.D.
L4 — 4 Turns, 1/8″ Copper Tubing, 0.6″ I.D., 1.0″ Long
L5, L6 — 2.0 µH, Fair–Rite 2643021801 Ferrite bead each or equivalent
Figure 1. 30 MHz Test Circuit Schematic
MRF448
2
MOTOROLA RF DEVICE DATA